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FQPF9N50C N Channel MOSFET Transistor

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General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Features

• 9 A, 500V, RDS(on) = 0.8 Ω @VGS = 10 V

• Low gate charge ( typical 28 nC)

• Low Crss ( typical 24 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability



FQPF9N50C

Data sheet

Packaging
TO-220F
Power Dissipation
44W
Type
N Channel MOSFET
Drain Current
9A
Drain-Source Voltage
500V
On resistance
0.8ohm
MPN
FQPF9N50C

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